http://www .weitron.com.tw weitron 1/2 23-nov-06 npn p lastic-encapsulate transistors C1815 features power dissipation maximum ratings* t a =25 unless otherwise noted symbol parameter value units v cbo collec t or -base v o ltage 60 v v ce o coll ector-emitter v o lt age 50 v v eb o emitter-base v o lt age 5 v i c coll ector curre nt -contin uous 150 ma p d t o t a l device di ssip a tio n 400 mw t j , t st g junctio n and s t orage t e mper ature -55-15 0 *these ratings are limitin g values above which the serviceability of any semiconductor de vice may be imp a ired. electrical char acteristics ta m b = 2 5 unle ss other w i se specified p a r a m e t e r s y mb ol t e st condi tions min t yp max unit co llecto r -b ase b r eakd o w n v o lt ag e v(br) cb o ic= 100 ua, i e =0 60 v co llecto r -emitter b r ea kd o w n v o lt ag e v(br) ce o ic= 0. 1 ma, i b = 0 50 v emitter-b ase b r eakd o w n v o lt ag e v(br) ebo i e = 100 ua, i c =0 5 v co llecto r cu t-o ff cu rren t i cb o v cb = 6 0 v , i e = 0 0.1 ua co llecto r cu t-o ff cu rren t i ce o v ce = 5 0 v , i b = 0 0.1 ua emitter cut-off current i ebo v eb = 5 v , i c = 0 0.1 ua dc c u rre nt gain h fe(1) v ce = 6 v , i c = 2ma 70 700 co llecto r -emitter satu r atio n v o lt ag e v ce (sat) i c = 100ma, i b = 10 ma 0.25 v base- emitter satu r atio n v o lt ag e v be (sat) i c = 100 ma, i b = 10ma 1 v t r a n s ition fre que nc y f t v ce = 10 v , i c = 1 m a f= 30mhz 80 mhz co llecto r ou tp u t cap acit a nce cob vcb=10v ,ie=0 f=1mhz 3.5 pf nois e figure nf v ce = 6 v , i c = 0 .1 ma f =1 khz,rg=1 0 k 10 db classifica tion of h fe(1) rank o y gr bl ra nge 70-1 40 120- 240 200- 400 350- 700 1 2 3 to 92 1 . em i tte r 2.coll ect or 3.base lead(pb)-free p b
weitron http://www .weitron.com.tw 2/2 23-nov-06 C1815 t y p i c a l c h a r a c t e r i s t i c s
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